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IPD90N06S4L06ATMA1
IPD90N06S4L06ATMA1
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IPD90N06S4L06ATMA1

IPD90N06S4L06ATMA1
Infineon Technologies
MOSFET N-CH 60V 90A TO252-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 10 V
FET Feature
-
Series
OptiMOS™
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.3mOhm @ 90A, 10V
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
IPD90N
Product Status
Discontinued at Digi-Key
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Mounting Type
Surface Mount
Power Dissipation (Max)
79W (Tc)
Supplier Device Package
PG-TO252-3-11
Vgs (Max)
±16V
Mfr
Infineon Technologies
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Vgs(th) (Max) @ Id
2.2V @ 40µA
Input Capacitance (Ciss) (Max) @ Vds
5680 pF @ 25 V
Operating Temperature
-55°C ~ 175°C (TJ)
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