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IPI06CN10N-G

IPI06CN10N-G
Infineon Technologies
MOSFET N-CH 100V 100A TO262-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
10V
Supplier Device Package
PG-TO262-3
Package
Tube
Mfr
Infineon Technologies
Vgs(th) (Max) @ Id
4V @ 180µA
Input Capacitance (Ciss) (Max) @ Vds
9200 pF @ 50 V
Series
OptiMOS™
FET Feature
-
Power Dissipation (Max)
214W (Tc)
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
139 nC @ 10 V
Base Product Number
IPI06C
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 100A, 10V
Vgs (Max)
±20V
Operating Temperature
-55°C ~ 175°C (TJ)
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