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IPN65R1K5CEATMA1
IPN65R1K5CEATMA1
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IPN65R1K5CEATMA1

IPN65R1K5CEATMA1
Infineon Technologies
MOSFET N-CH 650V 5.2A SOT223
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package
Tape & Reel (TR)^^Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Supplier Device Package
PG-SOT223
Mfr
Infineon Technologies
Series
CoolMOS™ CE
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
225 pF @ 100 V
Package / Case
TO-261-4, TO-261AA
Product Status
Not For New Designs
Operating Temperature
-40°C ~ 150°C (TJ)
Base Product Number
IPN65R1
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
5.2A (Tc)
FET Feature
-
Mounting Type
Surface Mount
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
10.5 nC @ 10 V
Power Dissipation (Max)
5W (Tc)
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