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IPP04N03LB-G

IPP04N03LB-G
Infineon Technologies
MOSFET N-CH 30V 80A TO220-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mfr
Infineon Technologies
FET Type
N-Channel
Power Dissipation (Max)
107W (Tc)
Package / Case
TO-220-3
Product Status
Obsolete
Rds On (Max) @ Id, Vgs
3.8mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 5 V
Mounting Type
Through Hole
Technology
MOSFET (Metal Oxide)
Supplier Device Package
PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Operating Temperature
-55°C ~ 175°C (TJ)
Package
Tube
Vgs(th) (Max) @ Id
2V @ 70µA
Vgs (Max)
±20V
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
5203 pF @ 15 V
Series
OptiMOS™
Drain to Source Voltage (Vdss)
30 V
Base Product Number
IPP04N
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