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IPP80N06S4L07AKSA1
IPP80N06S4L07AKSA1
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IPP80N06S4L07AKSA1

IPP80N06S4L07AKSA1
Infineon Technologies
MOSFET N-CH 60V 80A TO220-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Base Product Number
IPP80N
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package / Case
TO-220-3
Power Dissipation (Max)
79W (Tc)
Mfr
Infineon Technologies
Package
Tube
Product Status
Discontinued at Digi-Key
Drain to Source Voltage (Vdss)
60 V
Supplier Device Package
PG-TO220-3-1
Series
OptiMOS™
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Vgs(th) (Max) @ Id
2.2V @ 40µA
FET Feature
-
Mounting Type
Through Hole
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 10 V
Vgs (Max)
±16V
Operating Temperature
-55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds
5680 pF @ 25 V
Rds On (Max) @ Id, Vgs
6.7mOhm @ 80A, 10V
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