Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. IPSH6N03LA-G
IPSH6N03LA-G
IPSH6N03LA-G
Favorite Products
Share:  

IPSH6N03LA-G

IPSH6N03LA-G
Infineon Technologies
MOSFET N-CH 25V 50A TO251-3
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 5 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Mfr
Infineon Technologies
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 30µA
Vgs (Max)
±20V
Mounting Type
Through Hole
Package / Case
TO-251-3 Stub Leads, IPak
Base Product Number
IPSH6N
Operating Temperature
-55°C ~ 175°C (TJ)
Series
OptiMOS™
Package
Tube
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
71W (Tc)
Product Status
Obsolete
Input Capacitance (Ciss) (Max) @ Vds
2390 pF @ 15 V
FET Feature
-
Drain to Source Voltage (Vdss)
25 V
Supplier Device Package
PG-TO251-3-11
TOP
RFQ List ( 0 items)