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IPU103N08N3-G

Product Name IPU103N08N3-G

Manufacturer Infineon Technologies

Describe MOSFET N-CH 80V 50A TO251-3

Classification: Transistors - FETs, MOSFETs - Single

Stock Available

RoHs:

RoHS Compliant

Datasheet

Datasheet

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Available In Stock

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Product Attributes

Type PARAMETERS

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Gate Charge (Qg) (Max) @ Vgs

35 nC @ 10 V

Rds On (Max) @ Id, Vgs

10.3mOhm @ 46A, 10V

Vgs (Max)

±20V

Power Dissipation (Max)

100W (Tc)

Supplier Device Package

PG-TO251-3

Input Capacitance (Ciss) (Max) @ Vds

2410 pF @ 40 V

Mounting Type

Through Hole

Series

OptiMOS™

Package

Tube

Drain to Source Voltage (Vdss)

80 V

Operating Temperature

-55°C ~ 175°C (TJ)

Mfr

Infineon Technologies

Product Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id

3.5V @ 46µA

FET Feature

-

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Base Product Number

IPU103N

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

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Joinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031

+86 18576417887

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