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IRF1010EZ

IRF1010EZ
Infineon Technologies
MOSFET N-CH 60V 75A TO220AB
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Product Status
Obsolete
Vgs(th) (Max) @ Id
4V @ 100µA
Mfr
Infineon Technologies
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package
Tube
Mounting Type
Through Hole
Vgs (Max)
±20V
Rds On (Max) @ Id, Vgs
8.5mOhm @ 51A, 10V
Power Dissipation (Max)
140W (Tc)
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
Package / Case
TO-220-3
Operating Temperature
-55°C ~ 175°C (TJ)
Supplier Device Package
TO-220AB
Gate Charge (Qg) (Max) @ Vgs
86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2810 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
FET Feature
-
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