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IRF200P223
IRF200P223
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IRF200P223

IRF200P223
Infineon Technologies
MOSFET N-CH 200V 100A TO247AC
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Vgs (Max)
±20V
Package / Case
TO-247-3
Base Product Number
IRF200
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 175°C (TJ)
Supplier Device Package
TO-247AC
Mfr
Infineon Technologies
Series
StrongIRFET™
FET Feature
-
Product Status
Active
Power Dissipation (Max)
313W (Tc)
Mounting Type
Through Hole
Package
Tube
Rds On (Max) @ Id, Vgs
11.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
4V @ 270µA
Input Capacitance (Ciss) (Max) @ Vds
5094 pF @ 50 V
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Gate Charge (Qg) (Max) @ Vgs
102 nC @ 10 V
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