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IRF3711L
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IRF3711L

IRF3711L
Infineon Technologies
MOSFET N-CH 20V 110A TO262
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
Drain to Source Voltage (Vdss)
20 V
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Series
HEXFET®
Rds On (Max) @ Id, Vgs
6mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds
2980 pF @ 10 V
Package
Tube
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 4.5 V
FET Feature
-
Mfr
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Power Dissipation (Max)
3.1W (Ta), 120W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Supplier Device Package
TO-262
Product Status
Obsolete
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