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IRF3711S
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IRF3711S

IRF3711S
Infineon Technologies
MOSFET N-CH 20V 110A D2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
2980 pF @ 10 V
Package
Tube
Product Status
Obsolete
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Series
HEXFET®
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 4.5 V
Supplier Device Package
D2PAK
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Power Dissipation (Max)
3.1W (Ta), 120W (Tc)
Mounting Type
Surface Mount
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Mfr
Infineon Technologies
FET Feature
-
Drain to Source Voltage (Vdss)
20 V
Rds On (Max) @ Id, Vgs
6mOhm @ 15A, 10V
Vgs (Max)
±20V
Operating Temperature
-55°C ~ 150°C (TJ)
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