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IRF3808STRRPBF

IRF3808STRRPBF
Infineon Technologies
MOSFET N-CH 75V 106A D2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology
MOSFET (Metal Oxide)
Product Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
Input Capacitance (Ciss) (Max) @ Vds
5310 pF @ 25 V
FET Feature
-
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
106A (Tc)
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Mfr
Infineon Technologies
Rds On (Max) @ Id, Vgs
7mOhm @ 82A, 10V
Gate Charge (Qg) (Max) @ Vgs
220 nC @ 10 V
Power Dissipation (Max)
200W (Tc)
Series
HEXFET®
Drain to Source Voltage (Vdss)
75 V
Supplier Device Package
D2PAK
Package
Tape & Reel (TR)
FET Type
N-Channel
Operating Temperature
-55°C ~ 175°C (TJ)
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