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IRF520NSTRR

IRF520NSTRR
Infineon Technologies
MOSFET N-CH 100V 9.7A D2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Vgs (Max)
±20V
Product Status
Obsolete
Mounting Type
Surface Mount
Mfr
Infineon Technologies
Operating Temperature
-55°C ~ 175°C (TJ)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.8W (Ta), 48W (Tc)
Package
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 25 V
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss)
100 V
Vgs(th) (Max) @ Id
4V @ 250µA
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
9.7A (Tc)
Series
HEXFET®
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
200mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Supplier Device Package
D2PAK
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