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IRF5305STRLPBF
IRF5305STRLPBF
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IRF5305STRLPBF

IRF5305STRLPBF
Infineon Technologies
MOSFET P-CH 55V 31A D2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package
Tape & Reel (TR)^^Cut Tape (CT)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V
Supplier Device Package
D2PAK
Product Status
Active
Rds On (Max) @ Id, Vgs
60mOhm @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 25 V
Power Dissipation (Max)
3.8W (Ta), 110W (Tc)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Infineon Technologies
FET Type
P-Channel
Base Product Number
IRF5305
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