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IRF530PBF-BE3
IRF530PBF-BE3
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IRF530PBF-BE3

IRF530PBF-BE3
Vishay Siliconix
MOSFET N-CH 100V 14A TO220AB
Available
RoHS Compliant
Available In Stock
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Product Attributes
Type PARAMETERS
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
14A (Tc)
Mounting Type
Through Hole
Package
Tube
Base Product Number
IRF530
Power Dissipation (Max)
88W (Tc)
Package / Case
TO-220-3
Mfr
Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds
670 pF @ 25 V
Product Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Series
-
Drain to Source Voltage (Vdss)
100 V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Rds On (Max) @ Id, Vgs
160mOhm @ 8.4A, 10V
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Feature
-
Supplier Device Package
TO-220AB
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