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IRF5806TRPBF

IRF5806TRPBF
Infineon Technologies
MOSFET P-CH 20V 4A MICRO6
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Supplier Device Package
Micro6™(TSOP-6)
Gate Charge (Qg) (Max) @ Vgs
11.4 nC @ 4.5 V
FET Type
P-Channel
Mounting Type
Surface Mount
Series
HEXFET®
Vgs(th) (Max) @ Id
1.2V @ 250µA
Mfr
Infineon Technologies
Product Status
Obsolete
Package / Case
SOT-23-6 Thin, TSOT-23-6
Package
Tape & Reel (TR)^^Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
4A (Ta)
Rds On (Max) @ Id, Vgs
86mOhm @ 4A, 4.5V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
594 pF @ 15 V
Drain to Source Voltage (Vdss)
20 V
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Power Dissipation (Max)
2W (Ta)
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