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IRF620PBF-BE3
IRF620PBF-BE3
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IRF620PBF-BE3

IRF620PBF-BE3
Vishay Siliconix
MOSFET N-CH 200V 5.2A TO220AB
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Product Status
Active
Package / Case
TO-220-3
Rds On (Max) @ Id, Vgs
800mOhm @ 3.1A, 10V
Mfr
Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds
260 pF @ 25 V
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IRF620
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
±20V
Current - Continuous Drain (Id) @ 25°C
5.2A (Tc)
Package
Tube
FET Type
N-Channel
FET Feature
-
Series
-
Vgs(th) (Max) @ Id
4V @ 250µA
Drain to Source Voltage (Vdss)
200 V
Power Dissipation (Max)
50W (Tc)
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