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IRF6215LPBF

IRF6215LPBF
Infineon Technologies
MOSFET P-CH 150V 13A TO262
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Input Capacitance (Ciss) (Max) @ Vds
860 pF @ 25 V
Mounting Type
Through Hole
Power Dissipation (Max)
3.8W (Ta), 110W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
FET Type
P-Channel
Drain to Source Voltage (Vdss)
150 V
Product Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Mfr
Infineon Technologies
Series
HEXFET®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
290mOhm @ 6.6A, 10V
Package
Tube
FET Feature
-
Supplier Device Package
TO-262
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Gate Charge (Qg) (Max) @ Vgs
66 nC @ 10 V
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