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IRF640NSTRRPBF
IRF640NSTRRPBF
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IRF640NSTRRPBF

IRF640NSTRRPBF
Infineon Technologies
MOSFET N-CH 200V 18A D2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Vgs (Max)
±20V
Product Status
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds
1160 pF @ 25 V
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
4V @ 250µA
Rds On (Max) @ Id, Vgs
150mOhm @ 11A, 10V
Package
Tape & Reel (TR)^^Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
200 V
Power Dissipation (Max)
150W (Tc)
Supplier Device Package
D2PAK
Mfr
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
67 nC @ 10 V
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IRF640
Series
HEXFET®
FET Type
N-Channel
FET Feature
-
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