Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

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IRF6602
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IRF6602

IRF6602
Infineon Technologies
MOSFET N-CH 20V 11A DIRECTFET
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mounting Type
Surface Mount
Package
Tape & Reel (TR)^^Cut Tape (CT)
Rds On (Max) @ Id, Vgs
13mOhm @ 11A, 10V
Mfr
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C
11A (Ta), 48A (Tc)
FET Feature
-
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.3W (Ta), 42W (Tc)
Supplier Device Package
DIRECTFET™ MQ
Package / Case
DirectFET™ Isometric MQ
Product Status
Obsolete
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 4.5 V
Drain to Source Voltage (Vdss)
20 V
Vgs(th) (Max) @ Id
2.3V @ 250µA
Series
HEXFET®
Input Capacitance (Ciss) (Max) @ Vds
1420 pF @ 10 V
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