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IRF6635TR1PBF
IRF6635TR1PBF
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IRF6635TR1PBF

IRF6635TR1PBF
Infineon Technologies
MOSFET N-CH 30V 32A DIRECTFET
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drain to Source Voltage (Vdss)
30 V
Supplier Device Package
DIRECTFET™ MX
Vgs(th) (Max) @ Id
2.35V @ 250µA
Package / Case
DirectFET™ Isometric MX
Gate Charge (Qg) (Max) @ Vgs
71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
5970 pF @ 15 V
Package
Tape & Reel (TR)^^Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C
32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs
1.8mOhm @ 32A, 10V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mfr
Infineon Technologies
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Series
HEXFET®
Product Status
Obsolete
FET Type
N-Channel
Mounting Type
Surface Mount
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