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IRF6641TR1PBF
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IRF6641TR1PBF
IRF6641TR1PBF
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IRF6641TR1PBF

IRF6641TR1PBF
Infineon Technologies
MOSFET N-CH 200V 4.6A DIRECTFET
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Series
HEXFET®
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
2290 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
4.6A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs
59.9mOhm @ 5.5A, 10V
Operating Temperature
-40°C ~ 150°C (TJ)
FET Type
N-Channel
Vgs (Max)
±20V
Supplier Device Package
DIRECTFET™ MZ
Package
Tape & Reel (TR)^^Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Mounting Type
Surface Mount
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Mfr
Infineon Technologies
Vgs(th) (Max) @ Id
4.9V @ 150µA
Package / Case
DirectFET™ Isometric MZ
Product Status
Obsolete
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