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IRF6706S2TRPBF
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IRF6706S2TRPBF

IRF6706S2TRPBF
Infineon Technologies
MOSFET N-CH 25V 17A DIRECTFET
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Rds On (Max) @ Id, Vgs
3.8mOhm @ 17A, 10V
Package
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds
1810 pF @ 13 V
Mounting Type
Surface Mount
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 4.5 V
Current - Continuous Drain (Id) @ 25°C
17A (Ta), 63A (Tc)
Supplier Device Package
DirectFET™ Isometric S1
Package / Case
DirectFET™ Isometric S1
Series
HEXFET®
FET Feature
-
Mfr
Infineon Technologies
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
2.35V @ 25µA
FET Type
N-Channel
Power Dissipation (Max)
1.8W (Ta), 26W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
25 V
Vgs (Max)
±20V
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