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IRF6708S2TR1PBF
IRF6708S2TR1PBF
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IRF6708S2TR1PBF

IRF6708S2TR1PBF
Infineon Technologies
MOSFET N-CH 30V 13A DIRECTFET S1
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Operating Temperature
-55°C ~ 175°C (TJ)
Mfr
Infineon Technologies
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Power Dissipation (Max)
2.5W (Ta), 20W (Tc)
FET Feature
-
Series
HEXFET®
Package
Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V
Rds On (Max) @ Id, Vgs
8.9mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Product Status
Obsolete
Input Capacitance (Ciss) (Max) @ Vds
1010 pF @ 15 V
Supplier Device Package
DirectFET™ Isometric S1
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 4.5 V
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
Package / Case
DirectFET™ Isometric S1
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