Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. IRF6710S2TRPBF
IRF6710S2TRPBF
IRF6710S2TRPBF
Favorite Products
Share:  

IRF6710S2TRPBF

IRF6710S2TRPBF
Infineon Technologies
MOSFET N-CH 25V 12A DIRECTFET
Available
RoHS Compliant
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Package / Case
DirectFET™ Isometric S1
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 37A (Tc)
Mfr
Infineon Technologies
Series
HEXFET®
FET Feature
-
Product Status
Obsolete
Rds On (Max) @ Id, Vgs
5.9mOhm @ 12A, 10V
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.8W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id
2.4V @ 25µA
FET Type
N-Channel
Operating Temperature
-55°C ~ 175°C (TJ)
Package
Tape & Reel (TR)
Drain to Source Voltage (Vdss)
25 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1190 pF @ 13 V
Mounting Type
Surface Mount
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 4.5 V
Supplier Device Package
DirectFET™ Isometric S1
TOP
RFQ List ( 0 items)