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IRF6718L2TRPBF
IRF6718L2TRPBF
IRF6718L2TRPBF
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IRF6718L2TRPBF

IRF6718L2TRPBF
Infineon Technologies
MOSFET N-CH 25V 61A DIRECTFET
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package
Tape & Reel (TR)^^Cut Tape (CT)
Vgs (Max)
±20V
Product Status
Obsolete
Drain to Source Voltage (Vdss)
25 V
Series
HEXFET®
Current - Continuous Drain (Id) @ 25°C
61A (Ta), 270A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
6500 pF @ 13 V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
96 nC @ 4.5 V
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET L6
Package / Case
DirectFET™ Isometric L6
Power Dissipation (Max)
4.3W (Ta), 83W (Tc)
Mfr
Infineon Technologies
Vgs(th) (Max) @ Id
2.35V @ 150µA
Rds On (Max) @ Id, Vgs
0.7mOhm @ 61A, 10V
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
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