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IRF6725MTR1PBF

Product Name IRF6725MTR1PBF

Manufacturer Infineon Technologies

Describe MOSFET N-CH 30V 28A DIRECTFET

Classification: Transistors - FETs, MOSFETs - Single

Stock Available

RoHs:

RoHS Compliant

Datasheet

Datasheet

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Available In Stock

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Product Attributes

Type PARAMETERS

Power Dissipation (Max)

2.8W (Ta), 100W (Tc)

Package / Case

DirectFET™ Isometric MX

FET Type

N-Channel

Vgs (Max)

±20V

FET Feature

-

Package

Tape & Reel (TR)^^Cut Tape (CT)

Drain to Source Voltage (Vdss)

30 V

Gate Charge (Qg) (Max) @ Vgs

54 nC @ 4.5 V

Mounting Type

Surface Mount

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

28A (Ta), 170A (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Vgs(th) (Max) @ Id

2.35V @ 100µA

Rds On (Max) @ Id, Vgs

2.2mOhm @ 28A, 10V

Input Capacitance (Ciss) (Max) @ Vds

4700 pF @ 15 V

Supplier Device Package

DIRECTFET™ MX

Mfr

Infineon Technologies

Series

HEXFET®

Product Status

Obsolete

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Joinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031

+86 18576417887

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