Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. IRF6810STRPBF
IRF6810STRPBF
IRF6810STRPBF
Favorite Products
Share:  

IRF6810STRPBF

IRF6810STRPBF
Infineon Technologies
MOSFET N CH 25V 16A S1
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
Supplier Device Package
DirectFET™ Isometric S1
Operating Temperature
-40°C ~ 150°C (TJ)
Product Status
Obsolete
Package
Tape & Reel (TR)^^Cut Tape (CT)
Drain to Source Voltage (Vdss)
25 V
Package / Case
DirectFET™ Isometric S1
Mfr
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C
16A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.2mOhm @ 16A, 10V
FET Feature
-
Power Dissipation (Max)
2.1W (Ta), 20W (Tc)
Mounting Type
Surface Mount
FET Type
N-Channel
Vgs(th) (Max) @ Id
2.1V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
1038 pF @ 13 V
TOP
RFQ List ( 0 items)