Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. IRF6892STRPBF
IRF6892STRPBF
IRF6892STRPBF
Favorite Products
Share:  

IRF6892STRPBF

IRF6892STRPBF
Infineon Technologies
MOSFET N CH 25V 28A S3
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Mfr
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Product Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
28A (Ta), 125A (Tc)
Vgs(th) (Max) @ Id
2.1V @ 50µA
Vgs (Max)
±16V
Series
HEXFET®
FET Type
N-Channel
Operating Temperature
-40°C ~ 150°C (TJ)
Package
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 4.5 V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 28A, 10V
FET Feature
-
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
2510 pF @ 13 V
Power Dissipation (Max)
2.1W (Ta), 42W (Tc)
Package / Case
DirectFET™ Isometric S3C
Drain to Source Voltage (Vdss)
25 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Supplier Device Package
DIRECTFET™ S3C
TOP
RFQ List ( 0 items)