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IRF6898MTR1PBF
IRF6898MTR1PBF
IRF6898MTR1PBF
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IRF6898MTR1PBF

IRF6898MTR1PBF
Infineon Technologies
MOSFET N-CH 25V 35A DIRECTFET
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drain to Source Voltage (Vdss)
25 V
Product Status
Obsolete
Vgs (Max)
±16V
Series
HEXFET®
Package
Tape & Reel (TR)^^Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
35A (Ta), 213A (Tc)
FET Feature
Schottky Diode (Body)
Mfr
Infineon Technologies
FET Type
N-Channel
Power Dissipation (Max)
2.1W (Ta), 78W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package / Case
DirectFET™ Isometric MX
Vgs(th) (Max) @ Id
2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
5435 pF @ 13 V
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Rds On (Max) @ Id, Vgs
1.1mOhm @ 35A, 10V
Supplier Device Package
DIRECTFET™ MX
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