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IRF7342D2PBF
IRF7342D2PBF
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IRF7342D2PBF

IRF7342D2PBF
Infineon Technologies
MOSFET P-CH 55V 3.4A 8SO
Available
RoHS Compliant
Available In Stock
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Product Attributes
Type PARAMETERS
Vgs(th) (Max) @ Id
1V @ 250µA
Product Status
Obsolete
Input Capacitance (Ciss) (Max) @ Vds
690 pF @ 25 V
Power Dissipation (Max)
2W (Ta)
Mounting Type
Surface Mount
FET Feature
Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs
105mOhm @ 3.4A, 10V
Vgs (Max)
±20V
Package / Case
8-SOIC (0.154", 3.90mm Width)
Series
FETKY™
Package
Tube
Drain to Source Voltage (Vdss)
55 V
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
8-SO
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
3.4A (Ta)
Mfr
Infineon Technologies
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
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