Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. IRF7832PBF
IRF7832PBF
IRF7832PBF
Favorite Products
Share:  

IRF7832PBF

IRF7832PBF
Infineon Technologies
MOSFET N-CH 30V 20A 8SO
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
Power Dissipation (Max)
2.5W (Ta)
Supplier Device Package
8-SO
Product Status
Discontinued at Digi-Key
Rds On (Max) @ Id, Vgs
4mOhm @ 20A, 10V
Operating Temperature
-55°C ~ 155°C (TJ)
Mfr
Infineon Technologies
Package / Case
8-SOIC (0.154", 3.90mm Width)
Vgs (Max)
±20V
Mounting Type
Surface Mount
Vgs(th) (Max) @ Id
2.32V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 4.5 V
FET Feature
-
Series
HEXFET®
Package
Tube
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Input Capacitance (Ciss) (Max) @ Vds
4310 pF @ 15 V
FET Type
N-Channel
TOP
RFQ List ( 0 items)