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IRF7853PBF

IRF7853PBF
Infineon Technologies
MOSFET N-CH 100V 8.3A 8SO
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Rds On (Max) @ Id, Vgs
18mOhm @ 8.3A, 10V
Package
Tube
Vgs(th) (Max) @ Id
4.9V @ 100µA
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
Product Status
Discontinued at Digi-Key
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Series
HEXFET®
FET Feature
-
Package / Case
8-SOIC (0.154", 3.90mm Width)
Vgs (Max)
±20V
Power Dissipation (Max)
2.5W (Ta)
Drain to Source Voltage (Vdss)
100 V
Supplier Device Package
8-SO
Mfr
Infineon Technologies
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Input Capacitance (Ciss) (Max) @ Vds
1640 pF @ 25 V
Operating Temperature
-55°C ~ 150°C (TJ)
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