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IRF8910TRPBF
IRF8910TRPBF
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IRF8910TRPBF

IRF8910TRPBF
Infineon Technologies
MOSFET 2N-CH 20V 10A 8-SOIC
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Operating Temperature
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
10A
Mfr
Infineon Technologies
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Series
HEXFET®
Gate Charge (Qg) (Max) @ Vgs
11nC @ 4.5V
Power - Max
2W
Supplier Device Package
8-SO
Base Product Number
IRF8910
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
13.4mOhm @ 10A, 10V
Package
Tape & Reel (TR)^^Cut Tape (CT)
Product Status
Active
Vgs(th) (Max) @ Id
2.55V @ 250µA
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
960pF @ 10V
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