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IRFB23N20DPBF

IRFB23N20DPBF
Infineon Technologies
MOSFET N-CH 200V 24A TO220AB
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package
Tube
Gate Charge (Qg) (Max) @ Vgs
86 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C
24A (Tc)
Supplier Device Package
TO-220AB
Rds On (Max) @ Id, Vgs
100mOhm @ 14A, 10V
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
200 V
Mfr
Infineon Technologies
Package / Case
TO-220-3
Series
HEXFET®
Vgs(th) (Max) @ Id
5.5V @ 250µA
FET Feature
-
Mounting Type
Through Hole
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1960 pF @ 25 V
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
3.8W (Ta), 170W (Tc)
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