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IRFB3207ZPBF
IRFB3207ZPBF
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IRFB3207ZPBF

IRFB3207ZPBF
Infineon Technologies
MOSFET N-CH 75V 120A TO220AB
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Gate Charge (Qg) (Max) @ Vgs
170 nC @ 10 V
Operating Temperature
-55°C ~ 175°C (TJ)
Supplier Device Package
TO-220AB
Base Product Number
IRFB3207
Mfr
Infineon Technologies
FET Type
N-Channel
Product Status
Active
Vgs(th) (Max) @ Id
4V @ 150µA
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
6920 pF @ 50 V
FET Feature
-
Package / Case
TO-220-3
Package
Tube
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
300W (Tc)
Rds On (Max) @ Id, Vgs
4.1mOhm @ 75A, 10V
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
Vgs (Max)
±20V
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