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IRFB4510GPBF

IRFB4510GPBF
Infineon Technologies
MOSFET N CH 100V 62A TO-220AB
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-220-3
Vgs (Max)
±20V
Mfr
Infineon Technologies
Rds On (Max) @ Id, Vgs
13.5mOhm @ 37A, 10V
Input Capacitance (Ciss) (Max) @ Vds
3180 pF @ 50 V
Vgs(th) (Max) @ Id
4V @ 100µA
Mounting Type
Through Hole
Product Status
Obsolete
Power Dissipation (Max)
140W (Tc)
Supplier Device Package
TO-220AB
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Package
Tube
Current - Continuous Drain (Id) @ 25°C
62A (Tc)
Gate Charge (Qg) (Max) @ Vgs
87 nC @ 10 V
FET Feature
-
Series
HEXFET®
FET Type
N-Channel
Operating Temperature
-55°C ~ 175°C (TJ)
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