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IRFB4620PBF
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IRFB4620PBF

IRFB4620PBF
Infineon Technologies
MOSFET N-CH 200V 25A TO220AB
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Vgs (Max)
±20V
Product Status
Active
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Power Dissipation (Max)
144W (Tc)
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
1710 pF @ 50 V
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package
Tube
FET Type
N-Channel
Base Product Number
IRFB4620
Mfr
Infineon Technologies
Series
HEXFET®
Supplier Device Package
TO-220AB
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
72.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
5V @ 100µA
Package / Case
TO-220-3
FET Feature
-
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