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IRFR3412TRLPBF

IRFR3412TRLPBF
Infineon Technologies
MOSFET N-CH 100V 48A DPAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
25mOhm @ 29A, 10V
Mfr
Infineon Technologies
Series
HEXFET®
Product Status
Obsolete
Power Dissipation (Max)
140W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D-Pak
FET Type
N-Channel
Package
Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
89 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3430 pF @ 25 V
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
48A (Tc)
FET Feature
-
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