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IRFSL17N20D
IRFSL17N20D
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IRFSL17N20D

IRFSL17N20D
Infineon Technologies
MOSFET N-CH 200V 16A TO262
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 25 V
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
170mOhm @ 9.8A, 10V
Series
HEXFET®
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Package
Tube
Product Status
Obsolete
Vgs(th) (Max) @ Id
5.5V @ 250µA
Power Dissipation (Max)
3.8W (Ta), 140W (Tc)
Vgs (Max)
±30V
FET Feature
-
Drain to Source Voltage (Vdss)
200 V
FET Type
N-Channel
Mfr
Infineon Technologies
Operating Temperature
-55°C ~ 175°C (TJ)
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