Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. IRFSL4321PBF
IRFSL4321PBF
IRFSL4321PBF
Favorite Products
Share:  

IRFSL4321PBF

IRFSL4321PBF
Infineon Technologies
MOSFET N-CH 150V 85A TO262
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Power Dissipation (Max)
350W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-262
Rds On (Max) @ Id, Vgs
15mOhm @ 33A, 10V
Operating Temperature
-55°C ~ 175°C (TJ)
Mfr
Infineon Technologies
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status
Obsolete
Drain to Source Voltage (Vdss)
150 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
85A (Tc)
Package
Tube
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
4460 pF @ 25 V
FET Feature
-
Series
HEXFET®
Vgs (Max)
±30V
TOP
RFQ List ( 0 items)