Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

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IRFU3410
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IRFU3410

IRFU3410
Infineon Technologies
MOSFET N-CH 100V 31A IPAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Input Capacitance (Ciss) (Max) @ Vds
1690 pF @ 25 V
Drain to Source Voltage (Vdss)
100 V
Supplier Device Package
IPAK (TO-251AA)
Product Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
39mOhm @ 18A, 10V
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type
Through Hole
Package
Tube
Operating Temperature
-55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Mfr
Infineon Technologies
Series
HEXFET®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
FET Feature
-
Power Dissipation (Max)
3W (Ta), 110W (Tc)
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4V @ 250µA
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