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IRFU4105ZPBF
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IRFU4105ZPBF

IRFU4105ZPBF
Infineon Technologies
MOSFET N-CH 55V 30A IPAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Product Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
FET Feature
-
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
48W (Tc)
Mfr
Infineon Technologies
Package
Tube
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251AA)
Series
HEXFET®
Vgs(th) (Max) @ Id
4V @ 250µA
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
24.5mOhm @ 18A, 10V
Drain to Source Voltage (Vdss)
55 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 25 V
FET Type
N-Channel
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