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IRFZ34NPBF
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IRFZ34NPBF

IRFZ34NPBF
Infineon Technologies
MOSFET N-CH 55V 29A TO220AB
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Series
HEXFET®
Drain to Source Voltage (Vdss)
55 V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40mOhm @ 16A, 10V
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Mfr
Infineon Technologies
Package
Tube
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IRFZ34
Product Status
Active
FET Type
N-Channel
FET Feature
-
Vgs(th) (Max) @ Id
4V @ 250µA
Package / Case
TO-220-3
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V
Vgs (Max)
±20V
Power Dissipation (Max)
68W (Tc)
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