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IRFZ48ZLPBF

IRFZ48ZLPBF
Infineon Technologies
MOSFET N-CH 55V 61A TO262
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Technology
MOSFET (Metal Oxide)
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status
Obsolete
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
11mOhm @ 37A, 10V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
1720 pF @ 25 V
Package
Tube
Gate Charge (Qg) (Max) @ Vgs
64 nC @ 10 V
Vgs (Max)
±20V
Power Dissipation (Max)
91W (Tc)
Mfr
Infineon Technologies
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
61A (Tc)
Mounting Type
Through Hole
Series
HEXFET®
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Supplier Device Package
TO-262
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