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IRL1004LPBF
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IRL1004LPBF

IRL1004LPBF
Infineon Technologies
MOSFET N-CH 40V 130A TO262
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds
5330 pF @ 25 V
Operating Temperature
-55°C ~ 175°C (TJ)
Product Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
130A (Tc)
Vgs(th) (Max) @ Id
1V @ 250µA
FET Feature
-
Package
Tube
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 78A, 10V
Mounting Type
Through Hole
Supplier Device Package
TO-262
Power Dissipation (Max)
3.8W (Ta), 200W (Tc)
Mfr
Infineon Technologies
Series
HEXFET®
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 4.5 V
Vgs (Max)
±16V
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
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