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IRL3716PBF
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IRL3716PBF

IRL3716PBF
Infineon Technologies
MOSFET N-CH 20V 180A TO220AB
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Input Capacitance (Ciss) (Max) @ Vds
5090 pF @ 10 V
Supplier Device Package
TO-220AB
Product Status
Obsolete
Series
HEXFET®
Package / Case
TO-220-3
Package
Tube
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Power Dissipation (Max)
210W (Tc)
Vgs (Max)
±20V
Mounting Type
Through Hole
Mfr
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
79 nC @ 4.5 V
Drain to Source Voltage (Vdss)
20 V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Rds On (Max) @ Id, Vgs
4mOhm @ 90A, 10V
Operating Temperature
-55°C ~ 175°C (TJ)
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