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IRL40S212ARMA1
IRL40S212ARMA1
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IRL40S212ARMA1

IRL40S212ARMA1
Infineon Technologies
MOSFET N-CH 40V 195A D2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Product Status
Active
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
231W (Tc)
Base Product Number
IRL40S212
Package
Tape & Reel (TR)
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.9mOhm @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds
8320 pF @ 25 V
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Vgs(th) (Max) @ Id
2.4V @ 150µA
Series
HEXFET®, StrongIRFET™
FET Type
N-Channel
Mfr
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
137 nC @ 4.5 V
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss)
40 V
Vgs (Max)
±20V
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