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IRLHS6342TRPBF
IRLHS6342TRPBF
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IRLHS6342TRPBF

IRLHS6342TRPBF
Infineon Technologies
MOSFET N-CH 30V 8.7A/19A 6PQFN
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Supplier Device Package
6-PQFN (2x2)
Drain to Source Voltage (Vdss)
30 V
Series
HEXFET®
Product Status
Not For New Designs
Mounting Type
Surface Mount
Base Product Number
IRLHS6342
Operating Temperature
-55°C ~ 150°C (TJ)
Mfr
Infineon Technologies
FET Type
N-Channel
Vgs (Max)
±12V
Package
Tape & Reel (TR)^^Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C
8.7A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
15.5mOhm @ 8.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1019 pF @ 25 V
Power Dissipation (Max)
2.1W (Ta)
Vgs(th) (Max) @ Id
1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 4.5 V
FET Feature
-
Package / Case
6-PowerVDFN
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