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IRLR3110ZTRRPBF
IRLR3110ZTRRPBF
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IRLR3110ZTRRPBF

IRLR3110ZTRRPBF
Infineon Technologies
MOSFET N-CH 100V 42A DPAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 4.5 V
Operating Temperature
-55°C ~ 175°C (TJ)
Series
HEXFET®
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs(th) (Max) @ Id
2.5V @ 100µA
Mfr
Infineon Technologies
Mounting Type
Surface Mount
Supplier Device Package
D-Pak
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
IRLR3110
FET Type
N-Channel
Product Status
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds
3980 pF @ 25 V
Package
Tape & Reel (TR)
Drain to Source Voltage (Vdss)
100 V
Rds On (Max) @ Id, Vgs
14mOhm @ 38A, 10V
FET Feature
-
Power Dissipation (Max)
140W (Tc)
Current - Continuous Drain (Id) @ 25°C
42A (Tc)
Vgs (Max)
±16V
Technology
MOSFET (Metal Oxide)
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